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$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

✍ Scribed by Y. Wu; B. Lee; H. P. Wong

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Fabrication of $\hbox{Nb/Al}_{2}\hbox{O}

✍ Rongtao Lu, ; Elliot, A. J.; Wille, L.; Bo Mao, ; Siyuan Han, ; Wu, J. Z.; Talva 📂 Article 📅 2013 🏛 IEEE 🌐 English ⚖ 386 KB