Photoelectrochemical measurements of amo
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J. Herrero; M.T. GutiΓ©rrez
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Article
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1991
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Elsevier Science
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English
β 444 KB
Amorphous silicon, a-Si, thin films were prepared from SiH, by plasma glow discharge. Film characterization was accomplished using ir and -vfi optical measurements. Differences observed in the energy gap values, optically and photoelectrochemically determined, were correlated with the substrate temp