Extrinsic magnetoresistance in semicondu
β
U. Zeitler; A.G.M. Jansen
π
Article
π
1995
π
Elsevier Science
π
English
β 330 KB
The extrinsic magnetoresistance of a metallically doped InSb sample has been investigated. At high temperatures, where no magnetoquantum oscillations occur, an additional linear magnetoresistance (LMR) arising from a difference in the Hall voltages can be observed. This effect is shown to be due to