Extrinsic magnetoresistance in semiconductors

✍ Scribed by U. Zeitler; A.G.M. Jansen

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 330 KB
• Volume: 204
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)00247-s

✦ Synopsis

The extrinsic magnetoresistance of a metallically doped InSb sample has been investigated. At high temperatures, where no magnetoquantum oscillations occur, an additional linear magnetoresistance (LMR) arising from a difference in the Hall voltages can be observed. This effect is shown to be due to macroscopic variations of the electron concentration and of the thickness. At low temperatures these two contributions can be measured independently with the help of the superimposed magnetoquantum oscillations.