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Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion

✍ Scribed by So, Byung Moon ;Youn, Suk Bum ;Im, Ik-Tae

Book ID: 120077152
Publisher: Elsevier
Year: 2013
Tongue: English
Weight: 738 KB
Volume: 19
Category: Article
ISSN: 1226-086X
DOI: 10.1016/j.jiec.2013.02.017

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