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Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy

✍ Scribed by S. A. Smirnov; V. N. Panteleev; Yu. V. Zhilyaev; S. N. Rodin; A. S. Segal; Yu. N. Makarov; A. V. Butashin

No coin nor oath required. For personal study only.

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