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Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets

✍ Scribed by Ikoma, Y.; Endo, T.; Watanabe, F.; Motooka, T.


Book ID
121457905
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
678 KB
Volume
75
Category
Article
ISSN
0003-6951

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Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surfa