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Growth of resonant interband tunneling diodes using trimethylamine alane

โœ Scribed by R. Tsui; K. Shiralagi; J. Shen


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
369 KB
Volume
164
Category
Article
ISSN
0022-0248

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In recent years, improvements in semiconductor growth technologies have permitted the construction of devices in which carriers tunnel through confined sub-band states via np-n junctions or staggered-band-edge (Type II) heterostructures, this process often being denoted "Resonant Interband Tunnellin