Modelling of resonant interband tunnelling structures as back-back inter-dimensional esaki diodes
✍ Scribed by J.M.A. Gilman; A.G. O'Neill
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 376 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
In recent years, improvements in semiconductor growth technologies have permitted the construction of devices in which carriers tunnel through confined sub-band states via np-n junctions or staggered-band-edge (Type II) heterostructures, this process often being denoted "Resonant Interband Tunnelling" (RIT). The interband tunnelling curtent in 3D-2D-3D structures may also be modelled within a modified form of the theoretical framework of the Esaki diode, and the similarities to, and differences from, both singleband Resonant Tunnelling Diode (RTD) and RIT devices and effects are discussed. Consideration is also taken of the electrical properties of circuits based around such devices, and good correlation is found between our approach and the experimental results demonstrated by a number of authors in recent years. Estimates of other factors, such as recombination lifetime of the quantum well resonant state (which appears to be much smaller than the carrier transit time) appear to support an Esaki, rather than a resonant, interpretation of the tunnelling process in such devices.