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Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system

✍ Scribed by A. Guivarc'h; J. Caulet; B. Guenais; Y. Ballini; R. Guérin; A. Poudoulec; A. Regreny


Book ID
107790304
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
376 KB
Volume
95
Category
Article
ISSN
0022-0248

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The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0