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Growth of LaOCl crystalline films

✍ Scribed by Shigeo Horiuchi; Chuhei Oshima


Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
216 KB
Volume
23
Category
Article
ISSN
0022-0248

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In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 Β°C) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa