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Growth of KDP single crystals by temperature reduction under diffusion transport

✍ Scribed by A. Santos; Dr. J. M. Garcia-Ruiz

Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
322 KB
Volume
22
Category
Article
ISSN
0232-1300

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Stoichiometric single crystal growth of
Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization
✍ P. Prabukanthan; R. Dhanasekaran πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 213 KB

## Abstract High quality single crystals of ternary AgGaS~2~ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray