Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
β Scribed by V. P. Evtikhiev; V. E. Tokranov; A. K. Kryzhanovskii; A. M. Boiko; R. A. Suris; A. N. Titkov; A. Nakamura; M. Ichida
- Book ID
- 110119880
- Publisher
- Springer
- Year
- 1998
- Tongue
- English
- Weight
- 593 KB
- Volume
- 32
- Category
- Article
- ISSN
- 1063-7826
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π SIMILAR VOLUMES
We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 Γ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 Γ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized
The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied