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Continuous stimulated emission atT=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

✍ Scribed by V. P. Evtikhiev; I. V. Kudryashov; E. Yu. Kotel’nikov; V. E. Tokranov; A. N. Titkov; I. S. Tarasov; Zh. I. Alferov


Book ID
110120000
Publisher
Springer
Year
1998
Tongue
English
Weight
516 KB
Volume
32
Category
Article
ISSN
1063-7826

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