We have successfully fabricated post-type InGaN VCSEL structures and observed their room temperature oscillation at 399 nm under optical excitation. The nitride structures were grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) was employed to chara
β¦ LIBER β¦
Growth of InAlGaAs multilayer structures for high power and submilliamp vertical cavity lasers
β Scribed by K. Panzlaff; T. Hackbarth; E. Zeeb; T. Wipiejewski; K.J. Ebeling
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 334 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0921-5107
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## Abstract In order to obtain a high quality thick GaN layer on a 2βinch Si substrate without any crack, we investigated three kinds of buffer layer (AlGaN graded structure, AlN/GaN super lattice (SL) structure, and AlN/thick GaN/AlN structure) using a metalβorganic chemical vapor deposition (MOCV