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Growth of In1−xGaxSb and In1−xAlxSb films by mulsti target R.F. sputtering

✍ Scribed by J.E. Greene; C.E. Wickersham; J.L. Zilko


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
231 KB
Volume
32
Category
Article
ISSN
0040-6090

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Epitaxial growth of In1−x Gax Sb thin fi
📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 150 KB

threshold energy of 54 eV. Measurements of the work function show that its value practically does not change at electron irradiation. It is suggested that the electron impact creates a vacancy in the K-shell of the lithium adatom, and the adatom-substrate system, in accordance with the Franck-Condon