Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method
โ Scribed by G. Kh. Azhdarov; R. Z. Kyazimzade
- Book ID
- 110144685
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2005
- Tongue
- English
- Weight
- 43 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1063-7745
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๐ SIMILAR VOLUMES
Bi 2 Sr 2 CaCu 2 O 8+d (Bi-2212) superconducting single crystals were prepared by a modified vertical Bridgman method using large crucibles of a 30 mm external diameter with a cone-shaped bottom. In order to obtain a large single crystal with high crystallinity, we optimized the growth conditions, w
Bridgman growth of Nd:SGG (Sr 3 Ga 2 Ge 4 O 14 ) crystals has been investigated for the first time. Pt crucible of ร25mmร250mm with a seed well of ร10mmร80 mm is used, and seed is SGG crystal of ร10mmร50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temper