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Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxy

✍ Scribed by Junji Saito; Takeshi Igarashi; Tomohiro Nakamura; Kazuo Kondo; Akihiro Shibatomi

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
407 KB
Volume
81
Category
Article
ISSN
0022-0248

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The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti