𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of highly-oriented diamond films on 6H–SiC (0001) and Si (111) substrates and the effect of carburization

✍ Scribed by Tae-Hoon Lee; Soo-Hyung Seo; Seung-Min Kang; Jin-Seok Park

Book ID
114085744
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
779 KB
Volume
447-448
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of scandium aluminum nitride nano
Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE
✍ Bohnen, Tim ;van Dreumel, Gerbe W. G. ;Hageman, Paul R. ;Algra, Rienk E. ;van En 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 521 KB

## Abstract The formation of ScAlN nanowires on ScN/6H‐SiC(0001) by hydride vapor phase epitaxy (HVPE) was analyzed. The diameters and lengths of the nanowires were 50 to 150 nm and 1 µm, respectively. The nanowires had a Al/Sc metal ratio of 95/5 as measured by energy dispersive analysis of X‐rays

Effects of RIE treatments for {111} diam
Effects of RIE treatments for {111} diamond substrates on the growth of P-doped diamond thin films
✍ Tavares, Céline ;Koizumi, Satoshi ;Kanda, Hisao 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 465 KB

## Abstract The reactive ion etching (RIE) procedures were applied for mechanically polished {111} diamond substrates surfaces using oxygen and hydrogen gas sources to improve the crystalline quality of chemical vapor deposited (CVD) n‐type diamond layers. The growth of phosphorus‐doped films was p