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Growth of high mobility InSb by metalorganic chemical vapor deposition

โœ Scribed by D. L. Partin; L. Green; J. Heremans


Book ID
112814872
Publisher
Springer US
Year
1994
Tongue
English
Weight
454 KB
Volume
23
Category
Article
ISSN
0361-5235

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High quality InSb epilayers were grown epitaxially on InSb (1 0 0) by metalorganic chemical vapor deposition. Different growth temperatures and V/III ratios were employed in the growth and their effects on the quality of the grown films were studied. Low temperature photoluminescence spectra of the