𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of GaN and AlGaN for UV/blue p-n junction diodes

✍ Scribed by Akasaki, I.; Amano, H.; Murakami, H.; Sassa, M.; Kato, H.; Manabe, K.


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
370 KB
Volume
128
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Properties of Quantum Well Excitons in G
✍ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 195 KB πŸ‘ 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well

Growth and characterization of buried Ga
✍ M. Baldini; C. Ghezzi; A. Parisini; L. Tarricone; S. Vantaggio; E. Gombia; A. Mo πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 189 KB

## Abstract Structures composed of a p^++^(Zn)GaAs layer deposited by MOVPE on a n(Te)‐doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p‐n homo‐junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post‐grow