Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well
β¦ LIBER β¦
Growth of GaN and AlGaN for UV/blue p-n junction diodes
β Scribed by Akasaki, I.; Amano, H.; Murakami, H.; Sassa, M.; Kato, H.; Manabe, K.
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 370 KB
- Volume
- 128
- Category
- Article
- ISSN
- 0022-0248
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