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Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy

โœ Scribed by K. L. Whittingham; D. T. Emerson; J. R. Shealy; M. J. Matragrano; D. G. Ast


Book ID
112824028
Publisher
Springer US
Year
1995
Tongue
English
Weight
843 KB
Volume
24
Category
Article
ISSN
0361-5235

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Flow Modulation Growth of Thick GaN by H
โœ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 99 KB ๐Ÿ‘ 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.