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Growth of Cu(In,Ga)S2 on Si(100) substrates by multisource evaporation

โœ Scribed by Koichiro Oishi; Hironori Katagiri; Satoshi Kobayashi; Nozomu Tsuboi


Book ID
108356906
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
197 KB
Volume
64
Category
Article
ISSN
0022-3697

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Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surfa