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Growth of Cr doped GaAs single crystals by the gradient freeze method

✍ Scribed by F. Orito; Y. Tsujikawa; M. Tajima


Book ID
126654849
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
686 KB
Volume
55
Category
Article
ISSN
0021-8979

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Undoped GaAs grown by the vertical gradi
✍ E. Buhrig; C. Frank; G. GΓ€rtner; K. Hein; V. Klemm; G. KΓΌhnel; U. Voland πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 432 KB

Undoped GaAs crystals were grown by the vertical gradient freeze technique in a multizone furnace. By optimization of the growth equipment and the thermodynamic conditions, crystals were obtained with a low density of microdefects and dislocations (etch pits density about 10 3 cm-2) as well as semi-