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Growth of conductive and insulative highly-orientated aluminum nitride thin films using laser molecular beam epitaxy

✍ Scribed by Wu, Yonghui; Jia, C.H.; Zhang, W.F.

Book ID
121693227
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
812 KB
Volume
25
Category
Article
ISSN
0925-9635

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## Aluminum nitride thin films with very smooth surfaces have been grown by gas-source molecular beam epitaxy on 4H and 6H silicon carbide substrates. High purity ammonia was used as the nitrogen source in conjunction with Al evaporated from an effusion cell. Streaked reflection high energy electr