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Growth of BaSnO3 doped ErBa2Cu3O7−δ thin films for high JC applications

✍ Scribed by S. Yasunaga; M. Mukaida; A. Ichinose; S. Horii; R. Teranishi; K. Yamada; K. Matsumoto; R. Kita; Y. Yoshida; N. Mori


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
274 KB
Volume
468
Category
Article
ISSN
0921-4534

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We have improved surface resistance (R S ) properties of ErBa 2 Cu 3 O 7Àd (ErBCO) films by using BaTiO 3 (BTO) doping (BTO + ErBCO). The as-grown BTO + ErBCO films did not have enough carriers. We solve this problem by using O 3 + O 2 as background gas during the growth of BTO + ErBCO films. Then,