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Growth of (Al,Ga)As structures on (110)-GaAs by MBE

✍ Scribed by A.H. Kean; M.C. Holland; C.R. Stanley

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
341 KB
Volume
127
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Uniform GaAs quantum wires formed on vic
Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth
✍ Misaichi Takeuchi; Toshikazu Takeuchi; Yoshiji Inoue; Takehiko Kato; Koichi Inou πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 331 KB

GaAs quantum wires are naturally formed by molecular beam epitaxy on vicinal GaAs (110) surfaces. These quantum wires are induced by the formation of coherently aligned giant growth steps and thickness modulation at step edges. Transmission electron microscope (TEM) observations show that lower grow