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Growth of Al2O3thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

✍ Scribed by Jorge L. B. Maciel; Emerson A. Floriano; Luis V. A. Scalvi; Leandro P. Ravaro

No coin nor oath required. For personal study only.

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