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Growth, morphology and annealing of thin Co layers on Aumica

✍ Scribed by T.H. Gentner; F. Scheurer; T. Detzel; J.P. Bucher


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
335 KB
Volume
275
Category
Article
ISSN
0040-6090

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A 2000 layer of Tb followed by a 200 layer of Si was deposited onto an substrate. The samples were A A SiO 2 annealed from 480 Γ„C for 4 min to 800 Γ„C for 120 min in a high vacuum (p O 2 Γ‚ 10-7 Torr). It was inferred from Auger depth proÐles and peak shapes that the reaction between Tb and starts by