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Growth mechanism of thin films of yttria-stabilized zirconia by chemical vapor infiltration using NiO–ceria substrate as oxygen source

✍ Scribed by Kenji Kikuchi; Koji Okada; Atsushi Mineshige

Book ID
108192221
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
507 KB
Volume
162
Category
Article
ISSN
0378-7753

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📜 SIMILAR VOLUMES

Growth rate of yttria-stabilized zirconi
Growth rate of yttria-stabilized zirconia thin films formed by electrochemical vapor-deposition using NiO as an oxygen source
✍ Minoru Inaba; Atsushi Mineshige; Tomoyuki Maeda; Shinji Nakanishi; Tadayoshi Tak 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 579 KB

Thin films of yttria-stabilized zirconia (YSZ) were formed onto nickel oxide substrates by an electrochemical vapor deposition process using the substrates as oxygen sources, and ZrCl, and YCl, as metal sources. After deposition at 1000°C for l-6 h, dense films of cubic YSZ were formed. The film thi