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Growth Kinetics of GaN in Ammonia Atmosphere

โœ Scribed by Karpov, S. Yu ;Talalaev, R. A. ;Makarov, Yu. N. ;Grandjean, N. ;Massies, J. ;Damilano, B.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
150 KB
Volume
176
Category
Article
ISSN
0031-8965

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Microwave Plasma Etching of GaN in Nitro
โœ Frayssinet, E. ;Prystawko, P. ;Leszczynski, M. ;Domagala, J. ;Knap, W. ;Robert, ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 78 KB

Effects of microwave nitrogen plasma etching of gallium nitride epilayers grown on sapphire were studied. The samples were etched with different supplied power ranging from 400 up to 800 W. High resolution X-ray diffraction, atomic force microscopy and infrared reflectivity were used to characterize