Growth defects of lead germanate single crystals grown by the vertical Bridgman method
โ Scribed by Xianjun Wu; Jiayue Xu; Weiqing Jin
- Book ID
- 113779858
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 157 KB
- Volume
- 55
- Category
- Article
- ISSN
- 1044-5803
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Sr 3 Ga 2 Ge 4 O 14 (SGG) has been grown by the vertical Bridgman method. The dielectric constants ฮต T 11 and ฮต T 33 at room temperature is 13.61 and 18.18, respectively. The dielectric measurements show that SGG crystals display relative high temperature stability and high frequency stability. Ther
## Abstract ZnO crystals grown by the vertical Bridgman technique were comprehensively characterized in view of the impurities and intrinsic defects in the material. It is shown that residual Al is the cause of the residual nโtype conductivity and intrinsic defects play only a minor role in the sam