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Growth and properties of scandium epitaxial films on GaN

✍ Scribed by Kaplan, R.; Prokes, S. M.; Binari, S. C.; Kelner, G.

Book ID
115481137
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
313 KB
Volume
68
Category
Article
ISSN
0003-6951

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## Abstract We report results on growth studies of Fe on GaN, in particular with respect to structural and magnetic properties. The growth of GaN has been carried out by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on Si(111) and Al~2~O~3~ substrates, respectively. Fe