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Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy

โœ Scribed by O. Kwon; Y. Lin; J. Boeckl; S. A. Ringel

Book ID
107453502
Publisher
Springer US
Year
2005
Tongue
English
Weight
102 KB
Volume
34
Category
Article
ISSN
0361-5235

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## Abstract The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000โ€“1100โ€‰ยฐC, as confirmed by low