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Growth and performance characteristics of thin films of SiO2

✍ Scribed by A. Kumar; R.P. Agarwal; R. Singh

Book ID
104157612
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
320 KB
Volume
19
Category
Article
ISSN
0026-2692

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✦ Synopsis

The fabrication of MOS structures using an improved wet anodisation technique at low temperature, together with electrical and interfacial properties of the grown films are discussed. The thin films, of the order of 300 A thick, grown by anodic oxidation, have characteristics comparable with those of thermally grown oxide films. Possible applications of the films for VLSI and humidity sensing are suggested.

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