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Growth and dissolution of thin anodic layers on GaAs: A photoelectrochemical study

โœ Scribed by F. Decker

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
402 KB
Volume
30
Category
Article
ISSN
0013-4686

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โœฆ Synopsis

Thin anodic oxide films were allowed to grow on the surface of n-type GaAs electrodes. The dissolution rate of these films was controlled by the rotating electrode technique. Thickness and formation field of the oxide were evaluated by means of chroanoamperometry. The potential distribution across the semiconductorrelectrolyte junction was analysed by means of capacitance measurements. Ringdisc experiments were performed in order to study the influence of the oxide film on the redox reactions at the semiconductor electrode.

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