Growth and characterization of sulphamic acid single crystals grown by Sanakaranarayanan-Ramasamy (SR) method
β Scribed by M. Lenin; N. Balamurugan; P. Ramasamy
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 200 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
By directional solidification, single crystal of Sulphamic acid (SA) was successfully grown from aqueous solution by SankaranarayananβRamasamy (SR) method. A vertically designed Lβbend was used to avoid the effect due to spurious nucleation. A vertical bottomβseeded ampoule was used for the growth of single crystal. A seed crystal was mounted at the bottom of the ampoule. Sulphamic acid crystals of up to 40 mm in diameter and 60 mm in length have been grown with a growth up to 10 mm per day. The grown sulphamic acid single crystal was characterized using Xβray powder diffraction analysis, Raman, FTIR, and optical transmission studies. The dielectric behaviour was measured in the frequency range of 1 kHzβ10 MHz for the temperature ranges from 30 Β°C to 170 Β°C. The sulphamic acid single crystal was also grown by conventional method. (Β© 2007 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
## Abstract High quality single crystals of ternary AgGaS~2~ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder Xβray diffraction and single crystal Xβray