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Growth and characterization of strain compensated Si1−x−y epitaxial layers

✍ Scribed by J.L. Regolini; F. Gisbert; G. Dolino; P. Boucaud


Book ID
119124981
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
369 KB
Volume
18
Category
Article
ISSN
0167-577X

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The local atomic structure and lattice dynamics are studied for strain-compensated \(\mathrm{Si}_{1-\mathrm{x}-\mathrm{y}} \mathrm{Ge}_{\mathrm{x}} \mathrm{C}_{\mathrm{y}}\) layers grown by molecular beam epitaxy on \(\mathrm{Si}\) (001) substrates. The layers were characterized by transmission elec