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Growth and characterization of sol–gel prepared Gd2O3 films as gate insulators for Zn–Sn–O thin film transistors

✍ Scribed by Choi, Sungho; Park, Byung-Yoon; Jung, Ha-Kyun


Book ID
123475843
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
785 KB
Volume
534
Category
Article
ISSN
0040-6090

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The mixed oxide (Gd 1-x Y x ) 2 O 3 (0.0 ≤ x ≤ 1.0) were synthesized, as powder and thin film, by a sol-gel process. X-ray diffraction data were collected and crystal structure and microstructure analysis were performed using Rietveld refinement method. All samples were found to have the same crysta