Growth and characterization of Sm3+-substituted PZT thin films

✍ Scribed by S.K. Pandey; Shiv Kumar; S.N. Chatterjee; Upendra Kumar; Chandra Prakash; Ratnamala Chatterjee; T.C. Goel

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 846 KB
• Volume: 388
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2006.06.167

✦ Synopsis

We report a systematic study on growth of 2% and 4% Samarium (Sm) substituted lead zirconate titanate (PZT) thin films (with molar ratio of Zr:Ti::65/35) by sol gel technique on Pt/Si /1 0 0S and Pt/Si /1 1 1S substrates. XRD analysis show single phase for all films. Surface morphology was studied using atomic force microscope (AFM). A metal/ferroelectric/metal (MFM) structure was formed by depositing gold electrode on top of the film for electrical measurements (I-V (current vs voltage), C-V (capacitance vs voltage), P-E (polarization vs electric field)). The films show well-defined ferroelectric behaviour for both compositions (2% and 4% Sm-substituted PZT). I-V measurements show a compositional shift along Àve (negative) voltage axis. To obtain optical band gap, films were deposited on fused quartz and transmittance measurements were performed. Optical band gap was calculated from (ahu) 2 vs hu graph (where a is the extinction coefficient, h the planck's constant and u the frequency of light). The results are discussed.