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Growth and characterization of high-Tcbased heterostructures

✍ Scribed by F. Bobba; A. M. Cucolo; R. Di Leo; A. Nigro; P. Romano; E. Bacca; P. Prieto


Publisher
Italian Physical Society
Year
1997
Tongue
English
Weight
334 KB
Volume
19
Category
Article
ISSN
0392-6737

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Growth and characterization of delta typ
✍ R. NΓΆtzel; I. Eisele πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 371 KB

We present a procedure whereby 2-3nm thick layers of SiO, are incorporated in (100) Si during molecular beam epitaxial growth. Analysis by Auger electron spectroscopy and transmission electron microscopy shows, that the delta function SiO, layers with a width of only a few lattice planes are embedde