Growth and characterization of InGaN by
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A. Kraus; S. Hammadi; J. Hisek; R. BuΓ; H. JΓΆnen; H. Bremers; U. Rossow; E. Saka
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Article
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2011
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Elsevier Science
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English
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In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized by HR-XRD exhibit good crystalline quality and homogeneity of the grown layers. The incorporation efficiency of In into the InGaN layer was