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Growth and characterization of Al-doped CsLiB6O10 crystal

✍ Scribed by Xuesong Yu; Zhang-Gui Hu

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 713 KB
Volume: 318
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.11.085

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## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market