✦ LIBER ✦

Growth and characterisation of epitaxial Gax In1−x Asy P1−y

✍ Scribed by John O. Williams; Peter J. Wright; Alan W. Mabbitt

Book ID: 113185317
Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 313 KB
Volume: 12
Category: Article
ISSN: 0025-5408
DOI: 10.1016/0025-5408(77)90178-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth temperature effect on lattice mis

Growth temperature effect on lattice mismatch of LPE in1−x Gax Asy1−x/lnP layers

✍ D. Campi; C. Papuzza; F. Taiariol 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 399 KB

Single-mode conditions for GaxIn_1−xAsyP

Single-mode conditions for GaxIn_1−xAsyP_1−y/InP double-heterostructure strip waveguides with Gax_′In_1−x_′Asy_′P_1−y_′ side bounding layers

✍ Iga, Kenichi 📂 Article 📅 1980 🏛 The Optical Society 🌐 English ⚖ 318 KB

Growth and characterization of strain co

Growth and characterization of strain compensated Si1−x−y epitaxial layers

✍ J.L. Regolini; F. Gisbert; G. Dolino; P. Boucaud 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 369 KB

Theory and experiment of In1-xGaxAsy P1-

Theory and experiment of In1-xGaxAsy P1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers

✍ Minch, J.; Park, S.H.; Keating, T.; Chuang, S.L. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 383 KB

Epitaxial Growth of GaAs[sub x]P[sub 1−x

Epitaxial Growth of GaAs[sub x]P[sub 1−x] from the Liquid Phase

✍ Shih, K. K. 📂 Article 📅 1970 🏛 The Electrochemical Society 🌐 English ⚖ 434 KB

Epitaxial growth of In1−x Gax Sb thin fi

Epitaxial growth of In1−x Gax Sb thin films by multitarget rf sputtering. (USA): J E Greene, J Appl Phys, 47 (6), 1976, 2289–2297

📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 150 KB

threshold energy of 54 eV. Measurements of the work function show that its value practically does not change at electron irradiation. It is suggested that the electron impact creates a vacancy in the K-shell of the lithium adatom, and the adatom-substrate system, in accordance with the Franck-Condon