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Group analysis of the drift–diffusion model for quantum semiconductors

✍ Scribed by Ibragimov, N.H.; Khamitova, R.; Avdonina, E.D.; Galiakberova, L.R.


Book ID
124144333
Publisher
Elsevier Science
Year
2015
Tongue
English
Weight
300 KB
Volume
20
Category
Article
ISSN
1007-5704

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In this paper, we derive a coupled Schrödinger drift-diffusion self-consistent stationary model for quantum semiconductor device simulations. The device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are supposed negligible). The S