A new symmetrical double gate nanoscale
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Ali A. Orouji; M. Jagadesh Kumar
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Article
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2006
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Elsevier Science
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English
⚖ 216 KB
In this paper, we present the unique features exhibited by a novel double gate MOSFET in which the front gate consists of two side gates as an extension of the source/drain. The asymmetrical side gates are used to induce extremely shallow source/drain regions on either side of the main gate. Using t