A theoretical study of atomistic effects
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John R. Barker
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Article
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2003
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Elsevier Science
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English
β 832 KB
Recent developments in silicon MOSFET nanoelectronics point the way to devices having channel dimensions in the range down to a few nm. At these atomistic scales only a ΓΏnite number of impurities occur in the device volume and it is demonstrated that the Kohn-Luttinger self-averaging ansatz and cons