๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Graphene-Side-Gate Engineering

โœ Scribed by Ching-Tzu Chen; Low, T.; Hsin-Ying Chiu; Wenjuan Zhu

Book ID
115441698
Publisher
IEEE
Year
2012
Tongue
English
Weight
406 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The