Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (Β’B.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)
β¦ LIBER β¦
Grain boundary states and the characteristics of lateral polysilicon diodes
β Scribed by H.C. de Graaff; M. Huybers; J.G. de Groot
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 418 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0038-1101
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