Low voltage stress-induced leakage curre
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Tingting Tan; Zhengtang Liu; Hao Tian; Wenting Liu
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Article
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2010
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Elsevier Science
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English
⚖ 367 KB
The conduction mechanism and the behavior of stress-induced leakage current (SILC) through the HfO 2 high-k layers in metal-oxide-semiconductor (MOS) structures have been investigated. Assisted tunneling of electrons via stress-induced interface traps and bulk oxide traps are responsible for the SIL