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Grain boundary mediated leakage current in polycrystalline HfO2 films

✍ Scribed by K. McKenna; A. Shluger; V. Iglesias; M. Porti; M. Nafría; M. Lanza; G. Bersuker


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
575 KB
Volume
88
Category
Article
ISSN
0167-9317

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The conduction mechanism and the behavior of stress-induced leakage current (SILC) through the HfO 2 high-k layers in metal-oxide-semiconductor (MOS) structures have been investigated. Assisted tunneling of electrons via stress-induced interface traps and bulk oxide traps are responsible for the SIL